Si(Li) Detectors

For SEMs
- Crystal: active area of 10 mm2 to 80 mm2
- Resolution: 132eV or better; 131eV is typical with 10 mm2 crystal
- Available with a guaranteed resolution of 129eV or better
- Peak to background ratio: 20000:1 or better
- Manual slide assembly
For TEMs
- Crystal: active area of 30 mm2 or 50 mm2 for improved solid angle
- Angled crystal design for high take-off angle
- Resolution: 136eV or better; 134eV is typical with 30 mm2 crystal
- Peak to background ratio: 20000:1
- Automatic motorized retraction mechanism to protect the detector from high x-ray and scattered electron fluxes
Standard features on all Si(Li) detectors include
- Electronic restored FET
- Low-noise preamplifier
- Instrument-specific chamber interface flange
- 7.5 liter LN2 dewar (additional sizes available on request)
- Choice of window:
- AP3.3 for detection down to Beryllium
- DuraBeryllium™ for high-vacuum integrity and detection down to Sodium
|
Typical Specifications
|
Crystal active area (mm2) |
10 |
30 |
50 |
80 |
Resolution at MnKa (eV) |
132 |
136 |
140 |
148 |
Peak:Background |
20000:1 |
20000:1 |
15000:1 |
10000:1 |
|
|
Silicon Drift Detectors

- State-of-the-art drift technology
- LN2-free operation- Peltier cooled; no liquid coolant required
- Cool-down time of less than 5 minutes
- Resolution: better than 133eV; stable over a wide range of input count rates
- Available with resolution better than 129eV
- Throughput: capable of output rates exceeding
100,000 counts per second
- Light element detection down to Boron with quantification of Carbon
- Sensor: 10 or 30 mm2 active area
- Low-noise, high-rate preamplifier for high-count rate performance
- Tube diameter of less than 18 mm fits most EDS ports
|