RevolutionEDX?

Si(Li) Detectors

X-ray Detector

 

For SEMs

  • Crystal: active area of 10 mm2 to 80 mm2
  • Resolution: 132eV or better; 131eV is typical with 10 mm2 crystal
  • Available with a guaranteed resolution of 129eV or better
  • Peak to background ratio: 20000:1 or better
  • Manual slide assembly

For TEMs

  • Crystal: active area of 30 mm2 or 50 mm2 for improved solid angle
  • Angled crystal design for high take-off angle
  • Resolution: 136eV or better; 134eV is typical with 30 mm2 crystal
  • Peak to background ratio: 20000:1
  • Automatic motorized retraction mechanism to protect the detector from high x-ray and scattered electron fluxes 

Standard features on all Si(Li) detectors include

  • Electronic restored FET
  • Low-noise preamplifier
  • Instrument-specific chamber interface flange
  • 7.5 liter LN2 dewar (additional sizes available on request)
  • Choice of window:
  • AP3.3 for detection down to Beryllium
  • DuraBeryllium™ for high-vacuum integrity and detection down to Sodium
Typical Specifications
Crystal active area (mm2)
10 30 50 80
Resolution at MnKa (eV)
132 136 140 148
Peak:Background
20000:1 20000:1 15000:1 10000:1

 

Silicon Drift Detectors

Silicon Drift Detector

  • State-of-the-art drift technology
  • LN2-free operation- Peltier cooled; no liquid coolant required
  • Cool-down time of less than 5 minutes
  • Resolution: better than 133eV; stable over a wide range of input count rates
  • Available with resolution better than 129eV
  • Throughput: capable of output rates exceeding 100,000 counts per second
  • Light element detection down to Boron with quantification of Carbon
  • Sensor: 10 or 30 mm2 active area
  • Low-noise, high-rate preamplifier for high-count rate performance
  • Tube diameter of less than 18 mm fits most EDS ports

Throughput